diode-diode modules type sdd120n08b sdd120n12b sdd120n14b sdd120n16b sdd120n18b v rrm v 800 1200 1400 1600 1800 v rsm v 900 1300 1500 1700 1900 SDD120N20B 2000 2100 sdd120n22b 2200 2300 dimensions in mm (1mm=0.0394") symbol test conditions maximum ratings unit i frms i favm t vj =t vjm t c =100 o c; 180 o sine 188 120 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 2800 3300 2500 2750 a i fsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 39200 45000 31200 31300 a 2 s t vj t vjm t stg -40...+150 150 -40...+125 o c v isol 50/60hz, rms t=1min i isol <1ma t=1s 3000 3600 v~ m d mounting torque (m5) terminal connection torque (m5) _ 2.5-4/22-35 2.5-4/22-35 nm/lb.in. weight 105 g i 2 dt typ. 7olerance:+0.5mm - sdd1 0nxxb sdk a1a2 k1 k2 sda p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
diode-diode modules advantages * space and weight savings * simple mounting * improved temperature and power cycling * reduced protection circuits applications * supplies for dc power equipment * dc supply for pwm inverter * field supply for dc motors * battery dc power supplies symbol test conditions characteristic values unit v v f i f =36 0a; t vj =25 o c 1.63 v to for power-loss calculations only 0.75 v r t 1.95 m i r t vj =t vjm ; v r =v rrm 15 ma t vj =t vjm per diode; dc current per module r thjc 0.30 0.145 k/w per diode; dc current per module r thjk 0.50 0.245 k/w d s creepage distance on surface 12.7 mm d a strike distance through air 9.6 mm a maximum allowable acceleration 50 m/s 2 uc q s t vj =125 o c; i f =50a; -di/dt=3a/us 170 i rm 45 a features * international standard package * glass passivated chips * isolation voltage 3600 v~ * ul file no.310749 * rohs compliant * copper base plate sdd1 0nxxb p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
diode-diode modules 0 0 fig .11l power dissipation per diode vs. forward current i p fav fav 20 a 1 /2 sdd120b . w rec. 60 rec. 120 rec. 180 sin. 180 0 0 p fav fig .11r power dissipation per diode vs. ambient temperature t a 50 100 150 c o c o k/w r th(c-a) 1 0 0 fig .12l power dissipation of two modules vs. direct current p vtot a 2 sdd120b . w 100 200 300 i d 100 r l 0 0 p vtot fig .12r power dissipation of two modules vs. case temperature t a t c 50 100 150c o k/w r th(c-a) 100 200 w 300 123 113 103 83 73 93 c o 0 0 fig .13l power dissipation of three modules vs. direct current p vtot a 3 sdd b120 . w 200 300 i d 100 b 6 0 0 p vtot fig .13r power dissipation of three modules vs. case temperature t a t c 50 100 150 c o k/w r th(c-a) 200 w 300 122 112 102 92 82 50 100 150 40 60 80 cont. w 50 100 150 4 3 2.5 2 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 400 400 400 500 600 200 400 500 600 100 120 1.7 b 2 500 200 500 0.15 700 300 700 0.7 0.6 0.5 0.4 0.3 0.175 600 300 600 1.0 0.8 0.7 0.6 0.5 0.4 0.3 0.35 0.25 0.2 0.175 0.15 0.1 0.25 0.2 0.1 0.125 0.15 0.075 sirectifier sdd120n xxb p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
0 fig .14 transient thermal impedance vs. time 1 /2 sdd120b . k/w zth(j-s) zth(j-c) z th 0.4 0.6 0.2 0.3 0.5 0.001 t 0.01 0.1 1 10 s 100 0.1 0 0 fig .15 forward characteristics i f v f a 0.5 1 1.5 v 2 1 /2 sdd120b . typ. max. tvj=25 c o _ tvj=125 c o 100 200 300 400 fig .16 surge overload current vs. time i fsm(25 c) =2500a o i fsm(125 c)=2000a o 1 v rrm . 0.5 v rrm . 0 v rrm . 1 t 10 100 ms 1000 0.4 0.6 0.8 1 1.2 1.4 1.6 i f(ov) i fsm 2 1 /2 sdd120b . diode-diode modules sdd1 0nxxb p4 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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